GaAs MMIC Technology Radiation Effects
- 1 January 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 32 (6) , 4040-4045
- https://doi.org/10.1109/tns.1985.4334065
Abstract
A comprehensive study was made of radiation effects in the component devices that comprise a particular technology developed by Texas Instruments for GaAs MMICs. Total dose, transient, and neutron radiation effects were measured in FETs. Transient effects were measured in capacitors, resistors, Schottky barrier diodes and the MWICs. Results are compared with predictions of radiation effects models.Keywords
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