Breakdown and anti-breakdown events in high-field stressed ultrathin gate oxides
- 1 August 2001
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 45 (8) , 1327-1332
- https://doi.org/10.1016/s0038-1101(00)00262-8
Abstract
No abstract availableKeywords
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