Hole Transport in the InSbInAs material system
- 28 February 1995
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 93 (7) , 553-556
- https://doi.org/10.1016/0038-1098(94)00838-4
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Dislocation scattering effects on electron mobility in InAsSbJournal of Applied Physics, 1994
- Surface Fermi level pinning in epitaxial InSb studied by electric-field-induced Raman scatteringApplied Physics Letters, 1993
- Alloy scattering in p-type AlxGa1−xAsJournal of Applied Physics, 1992
- Inversion of conduction type in thin InSb films prepared on glass substratesJournal of Applied Physics, 1991
- Heteroepitaxial growth of InSb on (100)GaAs using molecular beam epitaxyApplied Physics Letters, 1988
- Determination of the scattering mechanisms in p-type semiconductors of the III–V group: The case of Zn-doped GaP and natural (undoped) GaSbSolid State Communications, 1988
- Electron mobility and free-carrier absorption in GaAs: Determination of the compensation ratioJournal of Applied Physics, 1979
- Polar mobility of electrons and holesPhysica Status Solidi (b), 1972
- Band Structure and Transport Properties of Some 3–5 CompoundsJournal of Applied Physics, 1961
- Electrical Properties of-Type Indium Antimonide at Low TemperaturesPhysical Review B, 1955