Charging damage from plasma enhanced TEOS deposition
- 1 June 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 16 (6) , 220-222
- https://doi.org/10.1109/55.790714
Abstract
Serious n-channel transistor hot-carrier lifetime degradation due to plasma-charging damage during PETEOS deposition is reported for the first time. Contrary to conventional wisdom, a dielectric film thickness dependent damage is observed. A new mechanism for charging-damage during plasma deposition of dielectric is proposed. This new mechanism uses photoconduction to explain why the antennae continue to charge up after a layer of dielectric is deposited on top. Some numerical estimation is provided.Keywords
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