The effect of plasma-induced oxide and interface degradation on hot carrier reliability
- 1 January 1994
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A simple method is proposed to quantitatively evaluate hot carrier reliability of a plasma-stressed PMOSFET using its characteristic degradation measured before forming gas annealing. This method is used to deduce a plasma-stress equivalent charging current. This plasma current increases with a decrease in gate oxide thickness. The hot carrier reliability of thinner oxides, however, is less influenced. Superior immunity of reoxidized-nitrided-oxide to hot carrier degradation after plasma stress is also demonstrated.<>Keywords
This publication has 18 references indexed in Scilit:
- Channel length and width effects on NMOS transistor degradation under constant positive gate-voltage stressingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Analysis of process-induced charges created in MOSFETs and related collection test structuresPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Modeling oxide thickness dependence of charging damage by plasma processingIEEE Electron Device Letters, 1993
- Plasma-damaged oxide reliability study correlating both hot-carrier injection and time-dependent dielectric breakdownIEEE Electron Device Letters, 1993
- Process induced oxide damage and its implications to device reliability of submicron transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- Process‐Induced Gate Oxide Charge Collector DamageJournal of the Electrochemical Society, 1992
- Correlation of plasma process induced charging with Fowler-Nordheim stress in p- and n-channel transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992
- Thin oxide damage by plasma etching and ashing processesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992
- Relationship between MOSFET degradation and hot-electron-induced interface-state generationIEEE Electron Device Letters, 1984
- The use of charge pumping currents to measure surface state densities in MOS transistorsSolid-State Electronics, 1976