Microstructures of low-temperature-deposited polycrystalline silicon with micrometer grains
- 15 June 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (12) , 6542-6548
- https://doi.org/10.1063/1.359063
Abstract
[[abstract]]The microstructures of low-temperature polycrystalline silicon grown both on SiO2 and Corning 7059 glass substrate are presented. The silicon was deposited by the hydrogen dilution method using electron-cyclotron-resonance chemical-vapor deposition at 250°C without any thermal annealing. The hydrogen dilution ratios were varied from 90% to 99%. Transmission electron microscopy images, Raman shift spectra, and X-ray-diffraction (XRD) patterns of the films were obtained. The maximum grain size was about 1 μm and the crystalline fraction which was characterized from Raman shift spectra was near 100%. From the XRD patterns 〈111〉- and 〈110〉-oriented crystalline silicon grains were clearly present in the polycrystalline silicon films[[fileno]]2030170010075[[department]]電機工程學This publication has 14 references indexed in Scilit:
- Structural and Electrical Properties of n-Type Poly-Si Films Prepared by Layer-by-Layer TechniqueJapanese Journal of Applied Physics, 1993
- Evolution of microstructures in hydrogenated silicon films prepared by diluted-hydrogen and hydrogen-atom-treatment methodsJournal of Applied Physics, 1993
- Bandgap Engineering in Hydrogenated Silicon Films Made by Combined Hydrogen Dilution and Atomic Hydrogen TreatmentsMRS Proceedings, 1993
- Microcrystalline silicon deposited by glow discharge decomposition of heavily diluted silaneMaterials Chemistry and Physics, 1992
- Nuclear magnetic resonance study on Si-H microstructure in hydrogenated amorphous silicon prepared by diluted-hydrogen and hydrogen-atom-treatment methodsApplied Physics Letters, 1992
- Potential applications of a new microwave ECR multicusp plasma ion sourceNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- Preparation of High-Quality n-Type Poly-Si Films by the Solid Phase Crystallization (SPC) MethodJapanese Journal of Applied Physics, 1990
- Low-temperature fabrication of high-mobility poly-Si TFTs for large-area LCDsIEEE Transactions on Electron Devices, 1989
- Transition from Amorphous to Crystalline Silicon: Effect of Hydrogen on Film GrowthMRS Proceedings, 1988
- Raman scattering from small particle size polycrystalline siliconSolid State Communications, 1981