Theoretical study of planar defects in silicon carbide
- 22 November 2002
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 14 (48) , 12733-12740
- https://doi.org/10.1088/0953-8984/14/48/310
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Theoretical Study of Cubic Polytype Inclusions in 4H-SiCMaterials Science Forum, 2002
- Characterisation and Defects in Silicon CarbideMaterials Science Forum, 2002
- Electronic Localization around Stacking Faults in Silicon CarbideMaterials Science Forum, 2002
- Structure of recombination-induced stacking faults in high-voltage SiC p–n junctionsApplied Physics Letters, 2002
- Localized electronic states around stacking faults in silicon carbidePhysical Review B, 2001
- Stacking fault band structure in 4H–SiC and its impact on electronic devicesApplied Physics Letters, 2001
- Luminescence from stacking faults in 4H SiCApplied Physics Letters, 2001
- Application of optical emission microscopy for reliability studies in 4H–SiC p+/n−/n+ diodesJournal of Applied Physics, 2001
- Long Term Operation of 4.5kV PiN and 2.5kV JBS DiodesMaterials Science Forum, 2001
- Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC DiodesMaterials Science Forum, 2001