Enhancement of photoluminescence intensity in InGaAs/AlxGa1−xAs quantum wells by hydrogenation
- 4 May 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (18) , 2276-2278
- https://doi.org/10.1063/1.107053
Abstract
The effect of diffusion of monatomic hydrogen on photoluminescence (PL) in the InGaAs/AlGaAs system has been studied. A significant increase in 77 K PL integrated intensity for In0.2Ga0.8As/AlxGa1−xAs quantum wells grown by molecular beam epitaxy is observed after hydrogenation. A 50% increase is observed for InGaAs/GaAs and the effect increases as the Al concentration increases from 0% to 33%. For 33%, the increase is approximately a factor of 9. This enhancement of the PL may be ascribed to hydrogen passivation of defects at the heterointerface or within the layers.Keywords
This publication has 10 references indexed in Scilit:
- Threshold reduction in strained InGaAs single quantum well lasers by rapid thermal annealingApplied Physics Letters, 1991
- Electroabsorptive modulators in InGaAs/AlGaAsApplied Physics Letters, 1991
- Electroreflectance and photoluminescence study of the effect of hydrogen on heavily doped GaAs/AlGaAs structuresApplied Physics Letters, 1990
- Electro-optical bistability in strained InxGa1−xAs/Al0.15Ga0.85As multiple quantum wellsApplied Physics Letters, 1990
- InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiencyApplied Physics Letters, 1990
- Passivation of interface defects in lattice-mismatched InGaAs/GaAs heterostructures with hydrogenJournal of Applied Physics, 1989
- Strained-layer InGaAs-GaAs-AlGaAs graded-index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxyApplied Physics Letters, 1989
- Graded-index separate-confinement InGaAs/GaAs strained-layer quantum well laser grown by metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Semiconducting and other major properties of gallium arsenideJournal of Applied Physics, 1982
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974