Investigation of strain effects in selectively grown GaAs on Si
- 2 December 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 145 (1-4) , 345-352
- https://doi.org/10.1016/0022-0248(94)91074-x
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Thermal stress distributions in GaAs on sawtooth-patterned Si substrates: A finite element approachApplied Physics Letters, 1992
- Anisotropic strain relaxation in GaAs layers grown on Si(100) substrates by post-growth patterningApplied Physics Letters, 1992
- Thermal stresses in square-patterned GaAs/Si: A finite-element studyApplied Physics Letters, 1991
- Dislocation density reduction in GaAs epilayers on Si using strained layer superlatticesJournal of Electronic Materials, 1991
- Selective area epitaxy of GaAs on Si using atomic layer epitaxy by LP-MOVPEJournal of Crystal Growth, 1991
- Gallium arsenide and other compound semiconductors on siliconJournal of Applied Physics, 1990
- Analysis for dislocation density reduction in selective area grown GaAs films on Si substratesApplied Physics Letters, 1990
- Defect reduction effects in GaAs on Si substrates by thermal annealingApplied Physics Letters, 1988
- GaAs heteroepitaxial growth on Si for solar cellsApplied Physics Letters, 1988
- Stress variations and relief in patterned GaAs grown on mismatched substratesApplied Physics Letters, 1988