The utilization of DX centres in high-pressure studies of low-dimensional doping structures in GaAs
- 1 October 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (10B) , B137-B142
- https://doi.org/10.1088/0268-1242/6/10b/026
Abstract
High-pressure experiments with thin slabs of silicon donors in GaAs are employed to search for the correlation effects expected from the formation of D+D- pairs expected from the negative-U model of DX centres. The mobilities in the individual subbands are very dependent on subband energy but a preliminary analysis does not require the existence of such pairs.Keywords
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