Progress in InGaAs-GaAs selective-area MOCVD toward photonic integrated circuits
- 1 June 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Quantum Electronics
- Vol. 3 (3) , 874-884
- https://doi.org/10.1109/2944.640641
Abstract
No abstract availableThis publication has 65 references indexed in Scilit:
- Growth, characterization and modeling of InxGa1−xP stripes by selective-area MOCVDJournal of Electronic Materials, 1996
- Growth, characterization, and modeling of ternary InGaAs-GaAs quantum wells by selective-area metalorganic chemical vapor depositionJournal of Electronic Materials, 1995
- 1.3 µm large spot-size laser diodes with laterallytapered active layerElectronics Letters, 1995
- Strained InGaAs/InAlAs MQW electroabsorption modulators with large bandwidth and low driving voltageIEEE Photonics Technology Letters, 1994
- Submilliampere threshold buried-heterostructure InGaAs/GaAs single quantum well lasers grown by selective-area epitaxyIEEE Photonics Technology Letters, 1994
- Characterization of electrical and optical loss of MOCVD regrowth in strained layer InGaAs-GaAs quantum well heterostructure lasersJournal of Crystal Growth, 1992
- Laser compatible waveguide electroabsorption modulator with high contrast and low operating voltage in GaAs/AlGaAsIEEE Photonics Technology Letters, 1991
- Temperature engineered growth of low-threshold quantum well lasers by metalorganic chemical vapor depositionApplied Physics Letters, 1989
- Low threshold buried-heterostructure quantum well lasers by excimer laser assisted disorderingApplied Physics Letters, 1988
- Low-threshold disorder-defined buried-heterostructure AlxGa1−xAs-GaAs quantum well lasersJournal of Applied Physics, 1985