Swift heavy-ion irradiation effects on electrical and defect properties of NPN transistors
- 8 July 2004
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 19 (8) , 1029-1039
- https://doi.org/10.1088/0268-1242/19/8/014
Abstract
No abstract availableKeywords
This publication has 56 references indexed in Scilit:
- Minimizing gain degradation in lateral PNP bipolar junction transistors using gate controlIEEE Transactions on Nuclear Science, 1999
- Prediction of early lethal SEGR failures of VDMOSFETs for commercial space systems'IEEE Transactions on Nuclear Science, 1999
- A comparative study of induced damage after irradiation with swift heavy ions, neutrons and electrons in low doped siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1998
- Mechanisms for total dose sensitivity to preirradiation thermal stress in bipolar linear microcircuitsIEEE Transactions on Nuclear Science, 1998
- Dose-rate and irradiation temperature dependence of BJT SPICE model rad-parametersIEEE Transactions on Nuclear Science, 1998
- Dose rate and annealing effects on total dose response of MOS and bipolar circuitsIEEE Transactions on Nuclear Science, 1995
- Dose-rate effects on radiation-induced bipolar junction transistor gain degradationApplied Physics Letters, 1994
- Charge separation for bipolar transistorsIEEE Transactions on Nuclear Science, 1993
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Influence of surface conditions on silicon planar transistor current gainSolid-State Electronics, 1967