Minimizing gain degradation in lateral PNP bipolar junction transistors using gate control
- 1 December 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 46 (6) , 1652-1659
- https://doi.org/10.1109/23.819134
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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