Spin dependent recombination and photoconductive resonance in silicon
- 28 March 1978
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 11 (6) , L197-L203
- https://doi.org/10.1088/0022-3719/11/6/004
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Paramagnetic defects in silicon/silicon dioxide systemsSurface Science, 1976
- Low Temperature Oxidation of Silicon Studied by Photosensitive ESR and Auger Electron SpectroscopyJournal of the Electrochemical Society, 1976
- Resistivity decrease due to electron spin resonance in the metallic region of heavily phosphorous doped siliconSolid State Communications, 1975
- Spin-Dependent Conductivity of Phosphorus-Doped Silicon in the Intermediate Concentration RegionJournal of the Physics Society Japan, 1974
- Properties of photoinduced EPR signals from real silicon and germanium surfacesPhysica Status Solidi (a), 1974
- Investigation of passivation mechanism in silicon surfaces by electron spin resonanceSurface Science, 1973
- Spin-Dependent Recombination on Silicon SurfacePhysical Review B, 1972
- Spin Energy Transfer from Donor Spin System to Mobile Electron System in P-Doped SiJournal of the Physics Society Japan, 1971
- Neutral-Impurity Scattering and Impurity Zeeman Spectroscopy in Semiconductors Using Highly Spin-Polarized CarriersPhysical Review Letters, 1966
- Neutral-Impurity Scattering Experiments in Silicon with Highly Spin-Polarized ElectronsPhysical Review Letters, 1966