Characteristics of GaN/Si(111) epitaxy grown using Al0.1Ga0.9N/AlN composite nucleation layers having different thicknesses of AlN
- 1 June 2002
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 241 (3) , 289-296
- https://doi.org/10.1016/s0022-0248(02)01308-8
Abstract
No abstract availableKeywords
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