Simplified Treatment of Transient Doping Behaviour in CVD(I)
- 1 November 1986
- journal article
- Published by Wiley in Crystal Research and Technology
- Vol. 21 (11) , 1421-1427
- https://doi.org/10.1002/crat.2170211109
Abstract
Physiochemical reasons are discussed for the delayed response of doping concentrations within epitaxial semiconductors (Si and III‐V compounds) to changes of the input partial pressure of dopant species for CVD processes. A simplified circuit representation for doping is used that takes care of five serial process steps, the first three of which are the topic of this work (Part I).Among the corresponding storage phenomena in which the gas phase is involved, those with adsorptional influences are to be expected as most important for transient behaviour. Storage of dopant species at the semiconductor surface is included into the circuit representation, as it has been done by Reif et al. for silicon doping. Moreover, adsorption at the reactor wall is represented approximately, assuming equilibrium with the gas phase.Keywords
This publication has 14 references indexed in Scilit:
- CVD Processes with Direct and Indirect IncorporationCrystal Research and Technology, 1986
- Decomposition equilibrium of arsine and low pressure doping of epitaxial CVD siliconCrystal Research and Technology, 1985
- Doping of epitaxial CVD silicon with arsenic or phosphorus (i). Steady state conditionsCrystal Research and Technology, 1985
- MOCVD n-type doping of GaAs and GaAlAs using silicon and selenium and fabrication of double heterostructure bipolar transistorJournal of Crystal Growth, 1984
- Reduced pressure MOVPE growth and characterization of GaAs/GaAlAs heterostructures using a triethylgallium sourceJournal of Crystal Growth, 1984
- Basic steps and layer homogeneity in CVD [II]Crystal Research and Technology, 1984
- Doping process control in silicon epitaxy (I). System identificationCrystal Research and Technology, 1983
- Computer Simulation in Silicon EpitaxyJournal of the Electrochemical Society, 1981
- A Model for Dopant Incorporation into Growing Silicon Epitaxial Films: I . TheoryJournal of the Electrochemical Society, 1979
- Transient and Steady‐State Response of the Dopant System of a Silicon Epitaxial Reactor: Transfer‐Function ApproachJournal of the Electrochemical Society, 1978