Design methodology and optimization of gate-driven NMOS ESD protection circuits in submicron CMOS processes
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 45 (12) , 2448-2456
- https://doi.org/10.1109/16.735721
Abstract
No abstract availableKeywords
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