Mosfet Modeling for Circuit Simulation

This publication has 92 references indexed in Scilit:

• An accurate and analytic threshold-voltage model for small-geometry MOSFETs with single-channel ion implantation in VLSI
  Solid-State Electronics, 1985
• An analytical method for determining intrinsic drain/source resistance of lightly doped drain (LDD) devices
  Solid-State Electronics, 1984
• Drain-voltage effects on the threshold voltage of a small-geometry MOSFET
  Solid-State Electronics, 1983
• Analytical solutions for threshold voltage calculations in ion-implanted IGFETs
  Solid-State Electronics, 1983
• Simplified long-channel MOSFET theory
  Solid-State Electronics, 1983
• Charge accumulation and mobility in thin dielectric MOS transistors
  Solid-State Electronics, 1982
• Accurate two sections model for MOS transistor in saturation
  Solid-State Electronics, 1976
• MOS threshold shifting by ion implantation
  Solid-State Electronics, 1973
• Threshold voltage of nonuniformly doped MOS structures
  Solid-State Electronics, 1973
• Threshold shift calculations for ion implanted MOS devices
  Solid-State Electronics, 1972