Thermal stability of Al0.48In0.52As/Ga0.47In0.53As/InP heterostructure and its improvement by phosphidization

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1 May 1996

journal article
research article
Published by Springer Nature in Journal of Electronic Materials

Vol. 25 (5) , 633-636
https://doi.org/10.1007/bf02666515

Abstract

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Keywords

This publication has 7 references indexed in Scilit:

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Damage-induced high-resistivity regions in Al0.48In0.52As
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