Simple analytical models for the temperature dependent threshold behavior of depletion-mode devices

This publication has 18 references indexed in Scilit:

• Temperature dependent threshold behavior of depletion mode MOSFETs: Characterization and simulation
  Solid-State Electronics, 1979
• Dynamic depletion mode: an E/D MOSFET circuit method for improved performance
  IEEE Journal of Solid-State Circuits, 1978
• A simplified model for subpinchoff conduction in depletion-mode IGFET's
  IEEE Transactions on Electron Devices, 1978
• Low temperature threshold behavior of depletion mode devices—Characterization and simulation
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1977
• Conductance of ion-implanted buried-channel MOS transistors
  IEEE Transactions on Electron Devices, 1976
• Low-level currents in ion-implanted MOSFET
  IEEE Transactions on Electron Devices, 1974
• MOS threshold shifting by ion implantation
  Solid-State Electronics, 1973
• Threshold shift calculations for ion implanted MOS devices
  Solid-State Electronics, 1972
• Ion-implanted complementary MOS transistors in low-voltage circuits
  IEEE Journal of Solid-State Circuits, 1972
• Shift of the Gate Threshold Voltage of MOS Transistors dne to the Introduction of Shallow Impurities
  Japanese Journal of Applied Physics, 1971