Laser Processing in Silicon on Insulator (SOI) Technologies
- 1 January 1984
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Growth of large areas of grain boundary-free silicon-on-insulatorElectronics Letters, 1983
- The Use of Selective Annealing for Growing Very Large Grains in Silicon on Insulator FilmsJapanese Journal of Applied Physics, 1983
- Explosive crystallization of a-Si films in both the solid and liquid phasesApplied Physics Letters, 1981
- The use of beam shaping to achieve large-grain cw laser-recrystallized polysilicon on amorphous substratesApplied Physics Letters, 1981
- Influence of cw laser scan speed in solid-phase crystallization of amorphous Si film on Si3N4/glass substrateApplied Physics Letters, 1981
- Solid-phase growth of large aligned grains during scanned laser crystallization of amorphous Ge films on fused silicaApplied Physics Letters, 1980
- Thin film MOSFET’s fabricated in laser-annealed polycrystalline siliconApplied Physics Letters, 1979
- Silicon-on-insulator m.o.s.f.e.t.s fabricated on laser-annealed polysilicon on SiO 2Electronics Letters, 1979
- cw laser recrystallization of 〈100〉 Si on amorphous substratesApplied Physics Letters, 1979
- On a peculiar phænomenon in the electro-deposition of antimonyJournal of Computers in Education, 1855