N-channel depletion-mode InP FET with enhanced barrier height gates
- 1 August 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (8) , 370-372
- https://doi.org/10.1109/55.31760
Abstract
The fabrication of an n-channel depletion-mode InP field-effect transistor (FET) with enhanced barrier height gates, using a surface passivation technique that substantially increases the barrier height ( Phi /sub b/=0.83 eV) of InP, is reported. The transistors demonstrate characteristics with excellent pinch-off, flat saturation, transconductance in the range of 60-68 mS/mm, and no indication of the onset of breakdown for drain-source biases in excess of 35 V. They are shown to be highly stable, with no observable drain current drift over a period of more than 24 h of testing under DC bias. The high stability and performance of these devices demonstrate the potential for the gate metallization of InP.<>Keywords
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