Effects of deposition temperature of insulator films on the electrical characteristics of InP metal-insulator-semiconductor field-effect transistors

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Abstract
Techniques of vapor etching of InP substrates and in situ deposition of phosphorus nitride film were applied to fabricate accumulation‐mode InP metal‐insulator‐semiconductor field‐effect transistors, where the temperature of vapor etching and deposition ranged from 250 to 500 °C. It has been found that the effective mobility of electrons in the surface layer of InP substrates decreases with the increase of the deposition temperature, and 450 °C as the substrate temperature during the etching and deposition was found to result in the smallest drain current drift, which was less than 2% of the initial value of drift.