700-h continuous room-temperature operation of AlxGa1−xAs-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition
- 15 August 1979
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (4) , 311-314
- https://doi.org/10.1063/1.91121
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Preparation and properties of Ga1-xAlxAs-GaAs heterostructure lasers grown by metalorganic chemical vapor depositionIEEE Journal of Quantum Electronics, 1979
- Continuous 300 °K laser operation of single-quantum-well AlxGa1−xAs-GaAs heterostructure diodes grown by metalorganic chemical vapor depositionApplied Physics Letters, 1979
- Bandfilling in metalorganic chemical vapor deposited AlxGa1−xAs-GaAs-AlxGa1−xAs quantum-well heterostructure lasersJournal of Applied Physics, 1978
- Low-threshold continuous laser operation (300–337 °K) of multilayer MO-CVD AlxGa1−xAs-GaAs quantum-well heterostructuresApplied Physics Letters, 1978
- Single-longitudinal-mode cw room-temperature Ga1−xAlxAs-GaAs channel-guide lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1978
- Room-temperature continuous operation of photopumped MO-CVD AlxGa1−xAs-GaAs-AlxGa1−xAs quantum-well lasersApplied Physics Letters, 1978
- Very low threshold Ga(1−x)AlxAs-GaAs double-heterostructure lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1978
- Continuous room-temperature operation of Ga(1−x)AlxAs-GaAs double-heterostructure lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1978
- Ga(1−x)AlxAs/Ga(1−y)AlyAs double-heterostructure room-temperature lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1977
- Very-Low-Current Operation of Mesa-Stripe-Geometry Double-Heterostructure Injection LasersApplied Physics Letters, 1972