Fabrication of High Quality Poly-Si From Fluorinated Precursors

This publication has 11 references indexed in Scilit:

• In-Situ Chemically Cleaning Poly-Si Growth at Low Temperature
  Japanese Journal of Applied Physics, 1992
• High-performance TFTs fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon film
  IEEE Transactions on Electron Devices, 1989
• Electrical Characteristics of High-Mobility Fine-Grain Poly-Si TFTs from Laser Irradiated Sputter-Deposited Si Film
  Japanese Journal of Applied Physics, 1989
• Thin-Film Transistors from Evaporated Low Temperature Processed Poly-Si Films
  Springer Proceedings in Physics, 1989
• Preparation of High-Quality poly-Si and μc-Si Films by the SPC Method
  MRS Proceedings, 1989
• Growth of Amorphous and Crystalline Silicon by HR-CVD (Hydrogen Radical Enhanced CVD)
  MRS Proceedings, 1987
• Preparation of Polycrystalline Silicon by Hydrogen-Radical-Enhanced Chemical Vapor Deposition
  Japanese Journal of Applied Physics, 1987
• Characterization of microcrystalline silicon by Hall and photo-Hall measurements
  Journal of Non-Crystalline Solids, 1983
• Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
  Physical Review B, 1983
• Infrared Spectra of Amorphous Silicon-Fluorine Alloys Prepared by Sputtering in Fluorosilane-Argon Gas Mixture
  Japanese Journal of Applied Physics, 1980