Achievement of high gain in a multiple quantum channel lateral heterojunction bipolar transistor
- 23 April 1990
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (17) , 1670-1672
- https://doi.org/10.1063/1.103112
Abstract
We describe refinements in the geometry of a lateral heterojunction bipolar transistor that have allowed us to greatly improve the dc characteristics of these devices. By reducing the base dimensions to 0.35 μm and improving the abruptness of the grading at the base‐emitter p‐n junction, we have achieved maximum current gains in excess of 600.Keywords
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