Luminescence from AI0.28Ga0.72AS0.62P0.38 layers grown on GaAs0.61P0.39 substrates by liquid-phase epitaxy
- 1 October 1992
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 21 (10) , 977-981
- https://doi.org/10.1007/bf02684206
Abstract
No abstract availableKeywords
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