Metallic Impurities and Dopant Cross-Contamination Effects in Ion Implanted Surfaces
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Modeling Anomalous Junction Formation in Silicon by the Codiffusion of Implanted Arsenic with PhosphorusPublished by ASTM International ,1983
- Impurity Gettering of Silicon Damage Generated by Ion Implantation Through SiO2 LayersJournal of the Electrochemical Society, 1982
- Evolution and Performance of the Nova NV-ID Predep™ ImplanterPublished by Springer Nature ,1982
- Sputtering yield measurementsPublished by Springer Nature ,1981
- Surface Contamination by Ion BombardmentPublished by Springer Nature ,1979
- Sample contamination caused by sputtering during ion implantationVacuum, 1979
- Activation analytical investigation of contamination and cross-contamination in ion implantationJournal of Electronic Materials, 1978
- The mechanism of simultaneous implantation and sputtering by high energy oxygen ions during secondary ion mass spectrometry (SIMS) analysisSurface Science, 1974
- Radiotracer Measurements of Sputtered Contamination Incurred during Ion Implantation ProcessingIEEE Transactions on Nuclear Science, 1973
- Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline TargetsPhysical Review B, 1969