Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs
- 30 April 2003
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 251 (1-4) , 481-486
- https://doi.org/10.1016/s0022-0248(02)02150-4
Abstract
No abstract availableKeywords
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