Inverted-vertical OMVPE reactor: design and characterization
- 1 February 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 116 (3-4) , 387-396
- https://doi.org/10.1016/0022-0248(92)90648-3
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- A mathematical representation of a modified stagnation flow reactor for MOCVD applicationsJournal of Crystal Growth, 1991
- Growth of GaAs in a rotating disk MOCVD reactorJournal of Crystal Growth, 1989
- A parametric investigation of GaAs epitaxial growth uniformity in a high speed, rotating-disk MOCVD reactorJournal of Crystal Growth, 1988
- Growth characteristics of a vertical rotating-disk OMVPE reactorJournal of Crystal Growth, 1988
- Complex flow phenomena in vertical MOCVD reactors: Effects on deposition uniformity and interface abruptnessJournal of Crystal Growth, 1987
- Heat and mass transfer in horizontal vapor phase epitaxy reactorsJournal of Crystal Growth, 1984
- Growth of multiple thin layer structures in the GaAs-AlAs system using a novel VPE reactorJournal of Crystal Growth, 1984
- Heterogeneous kinetics and mass transport in chemical vapour deposition processes: Part II application to silicon epitaxyProgress in Crystal Growth and Characterization, 1981
- Analysis of Transport Processes in Vertical Cylinder Epitaxy ReactorsJournal of the Electrochemical Society, 1977
- Hydrodynamic description of CVD processesThin Solid Films, 1977