Low Frequency Noise Properties of Microwave Transistors and their Application to Circuit Design
- 1 October 1994
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 62-75
- https://doi.org/10.1109/euma.1994.337198
Abstract
A knowledge of low frequency (L.F) noise in FET's, HBT's and others related devices is essential in designing oscillators, multipliers, mixers and broadband amplifiers. Physical origins and assessment techniques ofthis noise are addressed A lot of L.F noise measurements on commercial and research devices either performed in our laboratory or picked up from literature are presented and are intended to give the state of the art of today available performance. Finally design rules for reducing the impact of L.F noise on microwave circuits are suggested.Keywords
This publication has 100 references indexed in Scilit:
- Formulation of mobility fluctuation 1f noise in bipolar junction transistorsSolid-State Electronics, 1993
- A low-noise K-Ka band oscillator AlGaAs/GaAs heterojunction bipolar transistorsIEEE Transactions on Microwave Theory and Techniques, 1991
- 1/f noise in GaAs filamentsIEEE Transactions on Electron Devices, 1991
- Low frequency noise measurements as a tool to analyze deep-level impurities in semiconductor devicesSolid-State Electronics, 1987
- Low frequency noise physical analysis for the improvement of the spectral purity of GaAs FETs oscillatorsSolid-State Electronics, 1982
- 1f noise in GaAs MESFETSSolid-State Electronics, 1981
- A theory of generation-recombination noise from the velocity saturated channel of a GaAs MESFETSolid-State Electronics, 1981
- 1f Noise in p-n diodesPhysica B+C, 1980
- Excess noise sources due to defects in forward biased junctionsSolid-State Electronics, 1978
- Noise associated with recombination in the emitter space charge region of transistorsSolid-State Electronics, 1976