Low-temperature 3C-SiC heteroepitaxial film growth on Si by reactive-ion-beam deposition
- 1 March 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (5) , 2084-2089
- https://doi.org/10.1063/1.342854
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
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