Growth of GaN layers on SiC/Si(111) substrate by molecular beam epitaxy
- 30 May 2002
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 93 (1-3) , 172-176
- https://doi.org/10.1016/s0921-5107(02)00029-6
Abstract
No abstract availableKeywords
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