RF plasma annealing of implanted MIS structures

This publication has 20 references indexed in Scilit:

• Temperature dependence of capacitance-voltage characteristics in implanted MOS structures
  Physica Status Solidi (a), 1982
• Oxide charges induced in thermal silicon dioxide by scanning electron and laser beam annealing
  Journal of Applied Physics, 1982
• Interface charges beneath laser-annealed insulators on silicon
  Solid-State Electronics, 1980
• The effect of RF annealing upon electron-beam irradiated MIS structures
  Solid-State Electronics, 1979
• Laser-annealing behavior of a phosphorus-implanted silicon substrate covered with a SiO2 film
  Journal of Applied Physics, 1979
• Effect of laser beam irradiation on the electrophysical properties of the interface in boron ion implanted MIS structures
  Physica Status Solidi (a), 1978
• Effects of RF annealing on the excess charge centers in MIS dielectrics
  IEEE Journal of Solid-State Circuits, 1978
• Interface states in the silicon/silicon-oxide system observed by thermally stimulated charge release
  Electronics Letters, 1970
• Low-temperature hysteresis effects in metal-oxide-silicon capacitors caused by surface-state trapping
  IEEE Transactions on Electron Devices, 1968
• DENSITY OF SiO2–Si INTERFACE STATES
  Applied Physics Letters, 1966