Enhanced and retarded Ga self-diffusion in Si and Be doped GaAs isotope heterostructures
- 6 October 1999
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 112 (6) , 301-314
- https://doi.org/10.1016/s0038-1098(99)00376-2
Abstract
No abstract availableKeywords
This publication has 41 references indexed in Scilit:
- Si diffusion and intermixing in AlGaAs/GaAs structures using buried impurity sourcesApplied Physics Letters, 1995
- Mechanisms of doping-enhanced superlattice disordering and of gallium self-diffusion in GaAsApplied Physics Letters, 1988
- Kinetics of silicon-induced mixing of AlAs-GaAs superlatticesApplied Physics Letters, 1987
- Destruction mechanism of III-V compound quantum well structures due to impurity diffusionJournal of Applied Physics, 1987
- SIMS Study of Si–Be Co-doping Effects for Suppression of Compositional Disordering in AlGaAs–GaAs SuperlatticesJapanese Journal of Applied Physics, 1986
- SIMS Study of Compositional Disordering in Si Ion Implanted AlGaAs–GaAs SuperlatticeJapanese Journal of Applied Physics, 1986
- Electronic Structure, Total Energies, and Abundances of the Elementary Point Defects in GaAsPhysical Review Letters, 1985
- Effects of Be and Si on disordering of the AlAs/GaAs superlatticeApplied Physics Letters, 1985
- Disordering of Si-Doped AlAs/GaAs Superlattice by AnnealingJapanese Journal of Applied Physics, 1984
- Disorder of an AlAs-GaAs superlattice by silicon implantationApplied Physics Letters, 1982