The role of vapour etching in the growth of epitaxial InP
- 31 December 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 60 (2) , 225-234
- https://doi.org/10.1016/0022-0248(82)90093-8
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Effect of in situ etching and substrate misorientation on the morphology of VPE InP layersJournal of Crystal Growth, 1981
- Recent European developments in MBEJournal of Vacuum Science and Technology, 1981
- A study of vapour phase epitaxy of indium phosphideJournal of Materials Science, 1981
- Automatic electrochemical profiling of carrier concentration in indium phosphideElectronics Letters, 1979
- Pure and doped indium phosphide by vapour phase epitaxyJournal of Crystal Growth, 1978
- Multilayered structures of epitaxial indium phosphideJournal of Crystal Growth, 1975
- Révélation métallographique des défauts cristallins dans InPJournal of Crystal Growth, 1975
- The evaporation of InP under Knudsen (equilibrium) and Langmuir (free) evaporation conditionsJournal of Physics D: Applied Physics, 1974
- A study of the molar fraction effect in the PCl3-In-H2 systemJournal of Crystal Growth, 1974
- The preparation of high purity epitaxial InPSolid State Communications, 1970