Parametric investigation of InGaAs/InAlAs HEMTs grown by CBE
- 1 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 25-28
- https://doi.org/10.1016/0022-0248(93)90570-m
Abstract
No abstract availableKeywords
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- Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alaneApplied Physics Letters, 1990
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