Radiation effects on ion-implanted silicon-dioxide films
- 1 December 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 36 (6) , 2199-2204
- https://doi.org/10.1109/23.45425
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Radiation-Induced Interface-State Generation in MOS DevicesIEEE Transactions on Nuclear Science, 1986
- 10K Gate I2L and 1K component analog compatible bipolar VLSI technology—HIT-2IEEE Transactions on Electron Devices, 1985
- Radiation Hardened Silicon Devices Using a Novel Thick OxideIEEE Transactions on Nuclear Science, 1985
- A Radiation-Hard Insulator for MOS LSI Device IsolationIEEE Transactions on Nuclear Science, 1985
- Accounting for Dose-Enhancement Effects with CMOS TransistorsIEEE Transactions on Nuclear Science, 1985
- Hole traps and trivalent silicon centers in metal/oxide/silicon devicesJournal of Applied Physics, 1984
- Degradation Analysis of Lateral PNP Transistors Exposed to X-Ray IrradiationIEEE Transactions on Nuclear Science, 1984
- Radiation-Induced Interface States of Poly-Si Gate MOS Capacitors Using Low Temperature Gate OxidationIEEE Transactions on Nuclear Science, 1983
- A Hardened Field InsulatorIEEE Transactions on Nuclear Science, 1981
- The Effect of Ion Implantation on Oxide Charge Storage in MOS DevicesIEEE Transactions on Nuclear Science, 1975