GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
Top Cited Papers
- 25 June 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 24 (4) , 209-211
- https://doi.org/10.1109/led.2003.812144
Abstract
For the first time, a III-V compound semiconductor MOSFET with the gate dielectric grown by atomic layer deposition (ALD) is demonstrated. The novel application of the ALD process on III-V compound semiconductors affords tremendous functionality and opportunity by enabling the formation of high-quality gate oxides and passivation layers on III-V compound semiconductor devices. A 0.65-/spl mu/m gate-length depletion-mode n-channel GaAs MOSFET with an Al/sub 2/O/sub 3/ gate oxide thickness of 160 /spl Aring/ shows a gate leakage current density less than 10/sup -4/ A/cm/sup 2/ and a maximum transconductance of 130 mS/mm, with negligible drain current drift and hysteresis. A short-circuit current-gain cut-off frequency f/sub T/ of 14.0 GHz and a maximum oscillation frequency f/sub max/ of 25.2 GHz have been achieved from a 0.65-/spl mu/m gate-length device.Keywords
This publication has 20 references indexed in Scilit:
- Improvement of the interface quality during thermal oxidation of Al0.98Ga0.02As layers due to the presence of low-temperature-grown GaAsApplied Physics Letters, 2000
- Improvement of wet-oxidized AlxGa1−xAs (x∼1) through the use of AlAs/GaAs digital alloysApplied Physics Letters, 2000
- Demonstration of submicron depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresisIEEE Electron Device Letters, 1999
- Passivation of GaAs using (Ga2O3)1−x(Gd2O3)x, 0⩽x⩽1.0 filmsApplied Physics Letters, 1999
- Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide PassivationScience, 1999
- Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxideSolid-State Electronics, 1997
- Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modelingIEEE Transactions on Electron Devices, 1997
- Low interface state density oxide-GaAs structures fabricated by in situ molecular beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Si3N4/Si/Ge/GaAs metal-insulator-semiconductor structures grown by in situ chemical vapor depositionJournal of Applied Physics, 1994
- GaAs MOS structures with Al2O3 grown by molecular beam reactionSurface Science, 1979