Photoluminescence study of nitrogen-oxygen donors in silicon
- 8 January 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (2) , 148-150
- https://doi.org/10.1063/1.103059
Abstract
The series of nitrogen-oxygen donors recently observed in infrared absorption has been studied for the first time using photoluminescence spectroscopy. These complexes are found to bind excitons and multiexcitonic complexes, with an exciton localization energy of 3.9 meV. Conclusive identification of the exciton binding centers with the nitrogen-oxygen donors is provided by the observation of bound-exciton two-electron transitions which leave the donors in their 2s or 2p± excited states.Keywords
This publication has 13 references indexed in Scilit:
- Oxygen-nitrogen complexes in silicon formed by annealing in nitrogenApplied Physics Letters, 1989
- Photothermal ionisation spectroscopy of oxygen-related shallow defects in crystalline siliconApplied Physics A, 1989
- Electron Spin Resonance of Oxygen-Nitrogen Complex in SiliconJapanese Journal of Applied Physics, 1989
- The Role of Nitrogen in the Formation of Oxygen-Related Thermal Donors in SiliconMaterials Science Forum, 1989
- The Nature of Nitrogen-Oxygen Complexes in SiliconJapanese Journal of Applied Physics, 1988
- Nitrogen-Oxygen Complexes as Shallow Donors in Silicon CrystalsJapanese Journal of Applied Physics, 1986
- New oxygen related shallow thermal donor centres in Czochralski-grown siliconSolid State Communications, 1986
- A shell model of bound multiexciton complexes in siliconCanadian Journal of Physics, 1977
- New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and GermaniumPhysical Review B, 1967
- Experimental Proof of the Existence of a New Electronic Complex in SiliconPhysical Review Letters, 1960