Temperature dependence of gate and substrate currents in the CHE crossover regime
- 1 November 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 16 (11) , 506-508
- https://doi.org/10.1109/55.468282
Abstract
This paper presents new experimental data on the bias and temperature dependence of gate (I/sub G/) and substrate (I/sub B/) currents in submicrometer n-MOSFET's at drain voltages much smaller than the Si-SiO/sub 2/ energy barrier (V/sub DS//spl Lt//spl Phi//sub B//q/spl sime/3.15 V). In particular, we report simultaneous measurements of I/sub G/ and I/sub B/ in that part of the bias range conventionally defined "channel hot electron" regime (CHE) where I/sub B/ decreases for decreasing temperature (substrate current crossover regime). It is found that, at low V/sub DS/, the two currents exhibit an opposite temperature dependence, unexplained by present models.Keywords
This publication has 9 references indexed in Scilit:
- Bias and temperature dependence of gate and substrate currents in n-MOSFETS at low drain voltagePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A novel method for the experimental determination of the coupling ratios in submicron EPROM and flash EEPROM cellsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- The correlation between gate current and substrate current in 0.1 /spl mu/m NMOSFET'sIEEE Electron Device Letters, 1994
- The impact of voltage scaling on electron heating and device performance of submicrometer MOSFETsIEEE Transactions on Electron Devices, 1991
- Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFETsIEEE Transactions on Electron Devices, 1990
- Simulation of MOSFET lifetime under AC hot-electron stressIEEE Transactions on Electron Devices, 1988
- Substrate current at cryogenic temperatures: Measurements and a two-dimensional model for CMOS technologyIEEE Transactions on Electron Devices, 1987
- Low voltage hot-electron effects in short channel MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- Impact ionization at very low voltages in siliconJournal of Applied Physics, 1982