Near equilibrium growth of silicon by CVD II. The Si-I-H system
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 65 (1-3) , 406-410
- https://doi.org/10.1016/0022-0248(83)90081-7
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Near equilibrium growth of silicon by CVD I. The Si-Cl-H systemJournal of Crystal Growth, 1983
- Defect Control during Silicon Epitaxial Growth Using DichlorosilaneJournal of the Electrochemical Society, 1982
- Local selective homoepitaxy of silicon at reduced temperatures using a silicon-iodine transport systemJournal of Crystal Growth, 1978
- Growth and etching of silicon in chemical vapour deposition systems; The influence of thermal diffusion and temperature gradientJournal of Crystal Growth, 1975
- The Equilibrium Behavior of the Silicon-Hydrogen-Bromine and Silicon-Hydrogen-Iodine SystemsJournal of the Electrochemical Society, 1973
- A Thorough Thermodynamic Evaluation of the Silicon-Hydrogen-Chlorine SystemJournal of the Electrochemical Society, 1972
- Epitaxial Growth of Doped Silicon Using an Iodine CycleJournal of the Electrochemical Society, 1971
- Kinetics of Epitaxial Silicon Deposition by a Low Pressure Iodide ProcessJournal of the Electrochemical Society, 1965
- Epitaxial Vapor Growth of Ge Single Crystals in a Closed-Cycle ProcessIBM Journal of Research and Development, 1960
- Chemische Transportreaktionen. III. Über den Transport von Silicium im Temperaturgefälle unter Mitwirkung der Silicium(II)‐halogenide und über die Druckabhängigkeit der TransportrichtungZeitschrift für anorganische und allgemeine Chemie, 1957