Direct observation of extended monolayer flat islands at metalorganic vapor phase epitaxy grown Al0.5Ga0.5As-GaAs single quantum well interfaces
- 14 November 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (20) , 1923-1925
- https://doi.org/10.1063/1.100346
Abstract
Extended monolayer flat islands occurring at the heterointerface of metalorganic vapor phase epitaxy grown, growth interrupted Al0.5Ga0.5 As‐GaAs single quantum wells are directly observed for the first time by spatially resolved cathodoluminescence (CL). CL images of growth islands with a lateral size of between 500 nm and 2 μm are shown. The photoluminescence emission peak shows splitting corresponding to exciton transitions in the growth islands of the quantum well with a difference in the well thickness of one atomic layer.Keywords
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