Solid source MBE for phosphide-based devices
- 23 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 8, 79-82
- https://doi.org/10.1109/iciprm.1996.491939
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Temperature dependence of the Urbach edge in GaAsJournal of Applied Physics, 1995
- All solid source molecular beam epitaxy growth of strained-layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm)Applied Physics Letters, 1995
- InGaAs/InP heterojunction bipolar transistor grownby all-solid source molecular beam epitaxyElectronics Letters, 1995
- All solid source molecular beam epitaxy growth of1.35 µm wavelengthstrained-layer GaInAsP quantum well laserElectronics Letters, 1995
- Solid source molecular-beam epitaxial growth of Ga0.5In0.5P using a valved, three-zone phosphorus sourceJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Evaluation of the performance and operating characteristics of a solid phosphorus source valved cracking cell for molecular beam epitaxy growth of III–V compoundsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Electronic properties of InGaP grown by solid-source molecular-beam epitaxy with a GaP decomposition sourceApplied Physics Letters, 1994
- Electrical characteristics of InP grown by molecular beam epitaxy using a valved phosphorus cracking cellJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Molecular-beam epitaxial growth of arsenide/phosphide heterostructures using valved, solid group V sourcesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Use of a valved, solid phosphorus source for the growth of Ga0.5In0.5P and Al0.5In0.5P by molecular beam epitaxyApplied Physics Letters, 1991