Cluster ion beam processing
- 1 April 1998
- journal article
- Published by Elsevier in Materials Science in Semiconductor Processing
- Vol. 1 (1) , 27-41
- https://doi.org/10.1016/s1369-8001(98)00006-7
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Novel shallow junction technology using decaborane (B/sub 10/H/sub 14/)Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A high performance 0.25 μm logic technology optimized for 1.8 V operationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A high performance 50 nm PMOSFET using decaborane (B/sub 10/H/sub 14/) ion implantation and 2-step activation annealing processPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low-energy ion damage in semiconductors: A progress reportJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Surface modifications by gas cluster ion beamsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995
- Effects of temperature and defects on breakdown lifetime of thin SiO/sub 2/ at very low voltagesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1994
- Extended Defects from Ion Implantation and AnnealingPublished by Elsevier ,1993
- Junction Formation in Silicon by Rapid Thermal AnnealingPublished by Elsevier ,1993
- Ultrashallow junctions for ULSI using As/sub 2//sup +/ implantation and rapid thermal annealIEEE Electron Device Letters, 1992
- Near‐Surface Damage and Contamination after CF 4 / H 2 Reactive Ion Etching of SiJournal of the Electrochemical Society, 1985