InGaAsP superlattices grown by liquid-phase epitaxy
- 15 June 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (12) , 4068-4072
- https://doi.org/10.1063/1.336713
Abstract
The liquid-phase epitaxy of InGaAsP periodic structures is reported. A conventional horizontal sliding boat or a computer-controlled rotating crucible was used to grow two types of structures. Stacks of thin layers grown from the same melt showed high-quality x-ray diffraction profiles, which are shown to allow a precise determination of layer thickness; supersaturation was found to significantly influence layer thickness for short growth times. In superlattices such as InP/InGaAsP or InGaAsP/InGaAs, good composition and thickness reproductibility throughout the structure was verified by Auger sputtering. The presence of satellite peaks in x-ray diffraction profiles clearly proved that periodicity was well achieved in these structures. Quantum effects were observed by photoluminescence in sufficiently small wells.This publication has 12 references indexed in Scilit:
- A 1.3 µm InGaAsP/InP Multiquantum Well Laser Grown by LPEJapanese Journal of Applied Physics, 1985
- Inhomogeneity of liquid-phase-epitaxial InGaAsP lattice matched on InP: Effects of transient growthJournal of Applied Physics, 1984
- The interpretation of X-ray rocking curves from III–V semiconductor device structuresJournal of Crystal Growth, 1984
- 1.3 μm InGaAsP DCPBH multiquantum-well lasersElectronics Letters, 1984
- Modulation of electronic properties in liquid phase epitaxially grown p-n-p-n GaAs multilayersJournal of Electronic Materials, 1984
- Growth conditions and characterization of InGaAs/GaAs strained layers superlatticesJournal of Applied Physics, 1984
- Dependence of Rocking Curve for Thin In1-xGaxAs1-yPy Layer on Thickness in a Symmetric Bragg CaseJapanese Journal of Applied Physics, 1982
- X-ray double-crystal diffractometry of Ga1−xAlxAs epitaxial layersJournal of Crystal Growth, 1978
- LPE In1−xGaxP1−zAsz (x∼0.12, z∼0.26) DH laser with multiple thin-layer (<500 Å) active regionApplied Physics Letters, 1977
- Liquid Phase Epitaxy Apparatus for Multiple Layers Utilizing Centrifugal ForcesJapanese Journal of Applied Physics, 1977