Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors
- 19 June 2001
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 90 (1) , 310-314
- https://doi.org/10.1063/1.1372364
Abstract
The low frequency noise in GaN field effect transistors has been studied as function of drain and gate biases. The noise dependence on the gate bias points out to the bulk origin of the low frequency noise. The Hooge parameter is found to be around to Temperature dependence of the noise reveals a weak contribution of generation–recombination noise at elevated temperatures.
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