Low-voltage polymer field-effect transistors for nonvolatile memories

We demonstrate organic nonvolatile memories based on transistors, made from spin-coated polymers, that have programming voltages of $15\mathrm{V}$ and good data retention capabilities. The low-voltage programmable ferroelectric field-effect transistors were obtained by an optimized ferroelectric polymer deposition method using cyclohexanone as a solvent from which films can be obtained that are thin, smooth and defect free. The data retention characteristics were measured for $3\mathrm{h}$ under constant read conditions. Extrapolation predicts that the data retention capability exceeds $10\text{years}$ .