Ion beam etching of GaAs: Influence of etching parameters on the degree of radiation damage
- 28 April 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (17) , 2297-2299
- https://doi.org/10.1063/1.118841
Abstract
The possibility of decreasing the radiation damage of GaAs during ion beam etching was investigated with the help of a photoluminescence spectra study of GaAs/InGaAs/GaAs heterostructures with near surface quantum wells. It was shown that the change of normal ion incidence to oblique and the decrease of the sample temperature to that of liquid nitrogen cause minimum radiation damage to GaAs.Keywords
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