Crystal growth and sticking coefficient of Bi2Te3 thin films on Si(1 1 1) substrate
- 1 January 1995
- journal article
- Published by Springer Nature in Journal of Materials Science Letters
- Vol. 14 (3) , 194-197
- https://doi.org/10.1007/bf00318254
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Optimal crystal growth conditions of thin films of Bi2Te3 semiconductorsJournal of Crystal Growth, 1994
- Effect of substrate temperature on crystal growth of Bi2Te3 on single crystal Sb2Te3Journal of Materials Science Letters, 1994
- Epitaxial growth of BaMgF4 films on Si(100) and (111) substrates: An approach to ferroelectric/semiconductor heterostructuresApplied Physics Letters, 1993
- Residual strains in epitaxial fluorides on Si(111) substratesApplied Physics Letters, 1993
- Epitaxial growth of aluminum nitride on Si(111) by reactive sputteringApplied Physics Letters, 1991
- Rapid-phase transitions of GeTe-Sb2Te3 pseudobinary amorphous thin films for an optical disk memoryJournal of Applied Physics, 1991
- Molecular Beam EpitaxyPublished by Springer Nature ,1989
- Crystallization process of Sb-Te alloy films for optical storageJournal of Applied Physics, 1988
- Structural and electrical properties of bismuth telluride films grown by the molecular beam techniqueJournal of Materials Science Letters, 1988
- DESIGN CONSIDERATIONS FOR MOLECULAR BEAM EPITAXY SYSTEMSPublished by Elsevier ,1980